Download Thermal and Power Management of Integrated Circuits by Manoj Sachdev, Arman Vassighi PDF

By Manoj Sachdev, Arman Vassighi

In Thermal and gear administration of built-in Circuits, strength and thermal administration matters in built-in circuits in the course of common working stipulations and rigidity working stipulations are addressed. Thermal administration in VLSI circuits is turning into a vital part of the layout, try, and production. right thermal administration is the foremost to accomplish excessive functionality, caliber and reliability. functionality and reliability of built-in circuits are powerful services of the junction temperature. A small bring up in junction temperature may end up in major aid within the equipment lifetime. This publication reports the importance of the junction temperature as a reliability degree less than nominal and burn-in stipulations. the most recent learn within the region of electro-thermal modeling of built-in circuits can be awarded. fresh types and linked CAD instruments are lined and diverse strategies on the circuit and method degrees are reviewed. in this case, the authors offer an perception into the concept that of thermal runaway and the way it could possibly most sensible be shunned. a bit on low temperature operation of built-in circuits concludes the e-book.

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Another important observation from this figure is that the effectiveness of all these leakage reduction techniques is reducing with technology scaling. For reverse body bias technique, the AIOFF/AIoN has decreased from 20x to 7 . 5 ~ and for nonminimum Lefrit is reduced from 3 . 1 ~to 2 . 8 ~with scaling from 130 nm technology to 70 nm technology. 2~ to 1 . 9 with ~ scaling from 130 nm technology to 70 nm technology [19]. 3. JUNCTION TEMPERATURE PROJECTIONS FOR DEEP SUB-MICRON TECHNOLOGIES Several techniques can estimate junction temperature.

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Hawkins, A. M. Soden. "Reliability, test and IDDQ measurements". IEEE International Workshop on Iddq testing, pages 96-102, 1997. 44. W. K. C. Mogul. "Field-enhanced Si-Si bond-breakage mechanism for time-dependent dielectric break-down in thin-film Si02 dielectrics". Applied Physics Letter, Vol. 71, No. 8, pages 1101-1 103, 1997. 48 Thermal and Power Management of Integrated Circuits 45. M. E. Nariman, M. McBride, M. R. Olasupo. "Time dependent breakdown of ultra-thin gate oxide". IEEE Transaction on Electron Devices, Vol.

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